Semiconductor package and method of manufacturing the semiconductor package

ABSTRACT

A semiconductor package includes a package substrate having an upper surface and a lower surface and including a plurality of substrate pads formed on the upper surface, a capacitor structure arranged on the upper surface of the package substrate and including a semiconductor substrate and at least one decoupling capacitor formed in the upper surface of the semiconductor substrate, a plurality of first semiconductor chips mounted on the package and supported by the capacitor structure, first conductive connection members electrically connecting chip pads of the first semiconductor chips to the substrate pads, and second conductive connection members electrically connecting capacitor pads of the decoupling capacitor to the substrate pad.

PRIORITY STATEMENT

This application is a continuation of U.S. patent application Ser. No.15/787,434, filed Oct. 18, 2017, in the U.S. Patent and Trademark Office(USPTO), which claims the benefit of priority under 35 U.S.C. § 119 toKorean Patent Application No. 10-2016-0146471, filed on Nov. 4, 2016, inthe Korean Intellectual Property Office (KIPO), the entire contents ofboth of which are herein incorporated by reference.

BACKGROUND 1. Field

Example embodiments relate to a semiconductor package and a method ofmanufacturing the semiconductor package. More particularly, exampleembodiments relate to a multi-chip package including a decouplingcapacitor and a method of manufacturing the semiconductor package.

2. Description of the Related Art

In a multi-chip package such as eMCP (Embedded Multi Chip Package), adecoupling capacitor may be mounted to reduce effects of undesirablesimultaneous switching noise (SSN), such as a voltage drop induced inpower distribution when multiple output drivers switch simultaneously inthe package. However, a conventional bulk type of capacitor mounted in asemiconductor package may increase the entire thickness and area of thesemiconductor package, and wirings connected to the capacitor mayincrease inductance, thereby deteriorating reliability of thesemiconductor package.

SUMMARY

Example embodiments provide a semiconductor package capable of reducingthe entire size and improving electrical performance of thesemiconductor package.

In some embodiments, the disclosure is directed to a semiconductorpackage, comprising: a package substrate having an upper surface and alower surface and including a plurality of substrate pads formed on theupper surface; a capacitor structure arranged on the upper surface ofthe package substrate and including a semiconductor substrate and atleast one decoupling capacitor formed in an upper region of thesemiconductor substrate; a plurality of first semiconductor chipsmounted on the package substrate and supported by the capacitorstructure; first conductive connection members electrically connectingchip pads of the first semiconductor chips to the plurality of substratepads; and second conductive connection members electrically connectingcapacitor pads of the decoupling capacitor to the plurality of substratepads.

In some embodiments, the disclosure is directed to a semiconductorpackage, comprising: a package substrate; a first semiconductor chipmounted on the package substrate; a capacitor structure arranged on thepackage substrate to be spaced apart from the first semiconductor chipand including a semiconductor substrate and at least one decouplingcapacitor formed in an upper surface of the semiconductor substrate; aplurality of second semiconductor chips mounted on the package substrateand supported by the capacitor structure; and conductive connectionmembers electrically connecting capacitor pads of the decouplingcapacitor to a substrate pad of the package substrate.

In some embodiments, the disclosure is directed to a semiconductorpackage, comprising: a package substrate having an upper surface andincluding a plurality of substrate pads formed on the upper surface; acapacitor structure arranged on the upper surface of the packagesubstrate and including a semiconductor substrate and at least onedecoupling capacitor formed in an upper surface of the semiconductorsubstrate; a first semiconductor chip mounted on the package substrateto be spaced apart from the capacitor structure; a plurality of secondsemiconductor chips mounted on the package substrate and supported bythe capacitor structure and the first semiconductor chip; firstconductive connection members electrically connecting first chip pads ofthe first semiconductor chips to the plurality of substrate pads; secondconductive connection members electrically connecting second chip padsof the plurality of second semiconductor chips to the plurality ofsubstrate pads; and third conductive connection members electricallyconnecting capacitor pads of the decoupling capacitor to the pluralityof substrate pads.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 to 20 represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a cross-sectional view illustrating a semiconductor package inaccordance with example embodiments.

FIG. 2 is a plan view illustrating the exemplary semiconductor packagein FIG. 1.

FIG. 3 is a plan view illustrating a capacitor structure of theexemplary semiconductor package in FIG. 1.

FIGS. 4 to 6 are cross-sectional views illustrating various exemplarytypes of silicon chip capacitors of the capacitor structure in FIG. 3.

FIGS. 7 to 11 are views illustrating a method of manufacturing asemiconductor package in accordance with example embodiments.

FIG. 12 is a plan view illustrating a capacitor structure of asemiconductor package in accordance with example embodiments.

FIG. 13 is a plan view illustrating a package substrate of the exemplarysemiconductor package in FIG. 12.

FIG. 14 is a plan view illustrating a capacitor structure of asemiconductor package in accordance with example embodiments.

FIG. 15 is a plan view illustrating a package substrate of the exemplarysemiconductor package in FIG. 14.

FIG. 16 is a plan view illustrating a semiconductor package inaccordance with example embodiments.

FIG. 17 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments.

FIG. 18 is a cross-sectional view illustrating a capacitor structure anda first semiconductor chip on a package substrate of the exemplarysemiconductor package in FIG. 17.

FIG. 19 is a plan view illustrating the exemplary capacitor structure inFIG. 18.

FIG. 20 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

It will be understood that when an element is referred to as being“connected” or “coupled” to, or “on” another element, it can be directlyconnected or coupled to, or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected,” “directly coupled,” in or “directly on” to anotherelement, there are no intervening elements present. Other words used todescribe the relationship between elements should be interpreted in alike fashion (e.g., “between” versus “directly between,” “adjacent”versus “directly adjacent,” etc.). However, the term “contact,” as usedherein refers to a connection contact (i.e., touching) unless thecontext indicates otherwise.

Terms such as “same,” “equal,” “planar,” or “coplanar,” as used hereinwhen referring to orientation, layout, location, shapes, sizes, amounts,or other measures do not necessarily mean an exactly identicalorientation, layout, location, shape, size, amount, or other measure,but are intended to encompass nearly identical orientation, layout,location, shapes, sizes, amounts, or other measures within acceptablevariations that may occur, for example, due to manufacturing processes.The term “substantially” may be used herein to emphasize this meaning,unless the context or other statements indicate otherwise. For example,items described as “substantially the same,” “substantially equal,” or“substantially planar,” may be exactly the same, equal, or planar, ormay be the same, equal, or planar within acceptable variations that mayoccur, for example, due to manufacturing processes.

Terms such as “about” or “approximately” may reflect amounts, sizes,orientations, or layouts that vary only in a small relative manner,and/or in a way that does not significantly alter the operation,functionality, or structure of certain elements. For example, a rangefrom “about 0.1 to about 1” may encompass a range such as a 0%-5%deviation around 0.1 and a 0% to 5% deviation around 1, especially ifsuch deviation maintains the same effect as the listed range.

As used herein, items described as being “electrically connected” areconfigured such that an electrical signal can be passed from one item tothe other. Therefore, a passive electrically conductive component (e.g.,a wire, pad, internal electrical line, etc.) physically connected to apassive electrically insulative component (e.g., a prepreg layer of aprinted circuit board, an electrically insulative adhesive connectingtwo device, an electrically insulative underfill or mold layer, etc.) isnot electrically connected to that component. Moreover, items that are“directly electrically connected,” to each other are electricallyconnected through one or more passive elements, such as, for example,wires, pads, internal electrical lines, through vias, etc. As such,directly electrically connected components do not include componentselectrically connected through active elements, such as transistors ordiodes. The various pads described herein may be connected to internalcircuitry within the device to which they are connected, and maytransmit signals and/or voltage to and/or from the device to which theyare attached.

The semiconductor devices described herein embodied as an electronicdevice, such as a semiconductor memory chip or semiconductor logic chip,a stack of such chips, a semiconductor package including a packagesubstrate and one or more semiconductor chips, a package-on-packagedevice, or a semiconductor memory module, for example. The semiconductordevices described herein may be embodied as a volatile or non-volatilememory. A chip or package that includes such semiconductor devices mayalso be referred to generally as a semiconductor device.

FIG. 1 is a cross-sectional view illustrating a semiconductor package inaccordance with example embodiments. FIG. 2 is a plan view illustratingthe semiconductor package in FIG. 1. FIG. 3 is a plan view illustratinga capacitor structure of the semiconductor package in FIG. 1. FIGS. 4 to6 are cross-sectional views illustrating various types of silicon chipcapacitors of the capacitor structure in FIG. 3.

Referring to FIGS. 1 to 6, a semiconductor package 100 may include apackage substrate 110, a first semiconductor chip 200, a capacitorstructure 300 having a decoupling capacitor 320, a plurality of secondsemiconductor chips 400, a plurality of third semiconductor chips 500, aplurality of fourth semiconductor chips 600, and a molding member 700.The semiconductor package 100 may further include a plurality ofconductive connection members 230, 330, 430, 530, 630 configured toelectrically connect at least one of the first semiconductor chips 200,the second semiconductor chips 400, the third semiconductor chips 500,the fourth semiconductor chips 600 and the decoupling capacitor 320 tothe package substrate 110.

In example embodiments, the package substrate 110 may be a substratehaving an upper surface 112 and a lower surface 114 opposite to eachother. For example, the package substrate 110 may include a printedcircuit board (PCB), a flexible substrate, a tape substrate, etc. Theprinted circuit board may include a multi circuit board having vias andvarious circuit elements therein.

A plurality of wirings 160, 162 and substrate pads 120 connected to thewirings 160, 162 may be arranged on the upper surface 112 of the packagesubstrate 110. The wirings 160, 162 may extend on the upper surface 112of the package substrate 110. The wirings 160, 162 may have a ring shapeextending on the upper surface 112 of the package substrate 110. Forexample, the wirings 160, 162 may form a closed loop on the uppersurface 112, electrically connecting the elements to which the wirings160, 162 are connected. The substrate pads 120 may be connected torespective end portions of the wirings 160, 162. For example, at least aportion of the wirings 160, 162 may be used as the substrate pad 120,thereby forming a landing pad. The wirings 160, 162 may include a powerwiring or a ground wiring as a power net for supplying a power toelectrical components mounted on the package substrate 110. Thesubstrate pads 120 may include a power pad or a ground pad connected tothe power wiring or the ground wiring.

Although not illustrated in the figures, the package substrate 110 mayfurther include substrate signal wirings and substrate signal pads fortransferring a data signal to the electric components. Additionally,although some substrate pads are illustrated, the number and locationsof the substrate pads are exemplarily illustrated, and thus, it may notbe limited thereto. It will be appreciated that the substrate signalpads and the wirings as well as the substrate pads are not illustratedin the figures and explanations concerning the above elements will beomitted for the sake of simplicity.

A first insulation layer 140 may be formed on the upper surface 112 ofthe package substrate 110 to cover the wirings 160, 162 and expose thesubstrate pads 120. The first insulation layer 140 may cover the entireupper surface 112 of the package substrate 110 except the substrate pad120. For example, the first insulation layer 140 may include solderresist.

In example embodiments, the first semiconductor chip 200 may be mountedon the package substrate 110. The first semiconductor chip 200 may beadhered onto the upper surface 112 of the package substrate 110 by anadhesive member 240. The first semiconductor chip 200 may include anintegrated circuit. For example, the first semiconductor chip 200 may bea logic chip including a logic circuit. The logic chip may be acontroller for controlling memory chips.

The first semiconductor chip 200 may include chip pads 202 on an uppersurface, for example, an active surface. The chip pads 202 may includean input/output terminal serving as a power pin or an input/outputterminal serving as a ground pin. Although it is not illustrated in thefigures, the first semiconductor chip 200 may further include chipsignal pads which include input/output terminals serving as data pins.Although some chip pads are illustrated, the number and locations of thechip pads are exemplarily illustrated, and thus, it may not be limitedthereto. It will be appreciated that explanations concerning the chipsignal pads as well as the chip pads will be omitted for the sake ofsimplicity. The various pads of a device described herein may beconductive terminals connected to internal wiring of the device, and maytransmit signals and/or supply voltages between an internal wiringand/or internal circuit of the device and an external source. Forexample, chip pads of a semiconductor chip may electrically connect toand transmit supply voltages and/or signals between an integratedcircuit of the semiconductor chip and a device to which thesemiconductor chip is connected. The various pads may be provided on ornear an external surface of the device and may generally have a planarsurface area (often larger than a corresponding surface area of theinternal wiring to which they are connected) to promote connection to afurther terminal, such as a bump or solder ball, and/or an externalwiring.

The first semiconductor chip 200 may be electrically connected to thepackage substrate 110 by first conductive connection members 230. Insome embodiments, the first conductive connection member 230 mayelectrically connect each of the chip pads 202 of the firstsemiconductor chip 200 to a respective one of the substrate pads 120 ofthe package substrate 110. For example, the first conductive connectionmember 230 may include a bonding wire. Accordingly, the firstsemiconductor chip 200 may be stacked on the package substrate 110 bythe adhesive member 240, and may be electrically connected to thepackage substrate 110 by a plurality of the first conductive connectionmembers 230.

Alternatively, the first conductive connection members 230 may include asolder bump, a penetrating electrode (e.g., a through substrate via), asolder ball, a conductive paste, etc. For example, the firstsemiconductor chip 200 may be mounted on the package substrate 110 in aflip chip bonding manner. In this case, the first semiconductor chip 200may be arranged on the package substrate 110 such that the activesurface of the first semiconductor chip 200 on which the chip pads 202are formed faces the package substrate 110. The chip pads 202 of thefirst semiconductor chip 200 may be electrically connected to thesubstrate pads 120 of the package substrate 110 by the conductive bumps,for example, solder bumps. Additionally, a plurality of the firstsemiconductor chips 200 may be sequentially stacked on the packagesubstrate 110.

In example embodiments, the capacitor structure 300 may be arranged tobe spaced apart from the first semiconductor chip 200 on the packagesubstrate 110. For example, the capacitor structure 300 may be spacedapart from the first semiconductor chip 200 in a first direction D1and/or a second direction D2. In some embodiments, the capacitorstructure 300 may be formed horizontally adjacent to the firstsemiconductor chip 200. For example, an upper surface of the capacitorstructure 300 may be on the same vertical level as an upper surface ofthe first semiconductor chip 200, and a lower surface of the capacitorstructure 300 may be on the same vertical level as a lower surface ofthe first semiconductor chip 200. The capacitor structure 300 may beadhered onto the upper surface 112 of the package substrate 110 by anadhesive member 340. The capacitor structure 300 may be arranged betweenthe package substrate 110 and other electric components to support theelectric components. For example, the capacitor structure 300 may bedisposed on the package substrate 110, and other electronic componentsmay be disposed on the capacitor structure 300.

The capacitor structure 300 may include a semiconductor substrate 310and at least one decoupling capacitor 320 formed in an upper surface ofthe semiconductor substrate 310. For example, as explained furtherbelow, the at least one decoupling capacitor 320 may be formed to animplant depth in an upper region of the semiconductor substrate 310. Theimplant depth may extend to a particular depth below the top surface ofthe semiconductor substrate 310, and the at least one decouplingcapacitor 320 may be embedded in the substrate to the implant depth. Forexample, the upper surface of the at least one decoupling capacitor 320may be at the same vertical level as the top surface of thesemiconductor substrate 310, and the lower portion of the at least onedecoupling capacitor 320 may be at the implant depth. The semiconductorsubstrate 310 may be adhered onto the upper surface 112 of the packagesubstrate 110 by the adhesive member 340. For example, the adhesivemember 340 may include an adhesive film such as a direct adhesive film(DAF).

A thickness of the capacitor structure 300 may be determined based on athickness of the semiconductor substrate 310. After the decouplingcapacitor 320 is formed on a silicon wafer by a semiconductormanufacturing process, a backside of the wafer may be removed by aplanarization process, such that the semiconductor substrate 310 has adesired height measured in the third direction D3. For example, thecapacitor structure 300 may have a height or the thickness of from about10 μm to about 800 μm.

In example embodiments, the thickness of the capacitor structure 300 maybe substantially the same as the thickness of the first semiconductorsubstrate 310. Accordingly, the upper surface of the first semiconductorchip 200 may be coplanar with the upper surface of the capacitorstructure 300.

The capacitor structure 300 may include capacitor pads 302 on the uppersurface of the capacitor structure 300. For example, the capacitor pads302 may be formed on the upper surface of the first semiconductorsubstrate 310. The capacitor pads 302 may include a power terminal pador a ground terminal pad of the decoupling capacitor 320.

The capacitor structure 300 may be electrically connected to the packagesubstrate 110 by second conductive connection members 330. In someembodiments, the second conductive connection members 330 mayelectrically connect the capacitor pads 302 of the decoupling capacitor320 (e.g., the power terminal pad and the ground terminal pad) to thesubstrate pads 120 of the package substrate 110. For example, the secondconductive connection member 330 may include a bonding wire.Accordingly, the capacitor structure 300 may be stacked on the packagesubstrate 110 by the adhesive member 340 and may be electricallyconnected to the package substrate 110 by a plurality of the secondconductive connection members 330.

Alternatively, the second conductive connection members 330 may includea solder bump, a penetrating electrode, a solder ball, a conductivepaste, etc. In an embodiment, the capacitor pads 302 may be electricallyconnected to the substrate pads 120 of the package substrate 110 by thepenetrating electrodes penetrating the capacitor structure 300. Inanother embodiment, the capacitor structure 300 may be arranged on thepackage substrate 110 such that the surface of the capacitor structure300 on which the capacitor pads 302 are formed faces the packagesubstrate 110. The capacitor pads 302 of the capacitor structure 300 maybe electrically connected to the substrate pads 120 of the packagesubstrate 110 by the conductive bumps, for example, solder bumps.

In example embodiments, a plurality of the second semiconductor chips400 and a plurality of the third semiconductor chips 500 may be mountedon the package substrate 110. The second semiconductor chips 400 and thethird semiconductor chips 500 may be arranged to be spaced apart fromthe first semiconductor chip 200 and the capacitor structure 300 on thepackage substrate 110. For example, the second semiconductor chips 400and the third semiconductor chips 500 may be spaced apart from the firstsemiconductor chip 200 and the capacitor structure 300 in a firstdirection D1 and/or a second direction D2. The second semiconductorchips 400 may be adhered onto the upper surface 112 of the packagesubstrate 110 by an adhesive member (not shown). For example, theadhesive member may include an adhesive film such as a direct adhesivefilm (DAF).

The second semiconductor chip 400 may include chip pads 402 on an uppersurface of the second semiconductor chip 400 (e.g., an active surface).The chip pads 402 may include an input/output terminal serving as apower pin or an input/output terminal serving as a ground pin. Althoughnot illustrated in the figures, the second semiconductor chip 400 mayfurther include chip signal pads which include input/output terminalsserving as data pins.

The second semiconductor chip 400 may be electrically connected to thepackage substrate 110 by third conductive connection members 430. Insome embodiments, the third conductive connection members 430 mayelectrically connect the chip pad 402 of the second semiconductor chip400 to the substrate pad 120 of the package substrate 110. For example,the third conductive connection members 430 may include a bonding wire.Accordingly, the second semiconductor chips 400 may be stacked on thepackage substrate 110 by the adhesive member and may be electricallyconnected to the package substrate 110 by a plurality of the thirdconductive connection members 430. Alternatively, the third conductiveconnection members 430 may include a solder bump, a penetratingelectrode, a solder ball, a conductive paste, etc.

The third semiconductor chip 500 may include chip pads 502 on an uppersurface of the third semiconductor chip 500 (e.g., an active surface).The chip pads 502 may include an input/output terminal serving as apower pin or an input/output terminal serving as a ground pin. Althoughnot illustrated in the figures, the third semiconductor chip 500 mayfurther include chip signal pads which include input/output terminalsserving as data pins.

The third semiconductor chip 500 may be electrically connected to thepackage substrate 110 by fourth conductive connection members 530. Insome embodiments, the fourth conductive connection members 530 mayelectrically connect the chip pad 502 of the third semiconductor chip500 to the substrate pad 120 of the package substrate 110. For example,the fourth conductive connection members 530 may include a bonding wire.Accordingly, the third semiconductor chips 500 may be stacked on thepackage substrate 110 by the adhesive member (not shown), and may beelectrically connected to the package substrate 110 by a plurality ofthe fourth conductive connection members 530. Alternatively, the fourthconductive connection members 530 may include a solder bump, apenetrating electrode, a solder ball, a conductive paste, etc.

The second and third semiconductor chips 400 and 500 may be memory chipsincluding a memory circuit. For example, the second and thirdsemiconductor chips 400 and 500 may include volatile memory devices suchas dynamic random access memory (DRAM) devices. The number, sizes,locations, etc. of the second and third semiconductor chips 400 and 500are exemplarily illustrated, and thus, it may not be limited thereto.

In example embodiments, a plurality of the fourth semiconductor chips600 may be stacked on the first semiconductor chip 200, the capacitorstructure 300, the second semiconductor chips 400 and the thirdsemiconductor chips 500 in the third direction D3. For example, whenviewed in a plan view, the fourth semiconductor chips 600 may overlapthe first semiconductor chip 200, the capacitor structure 300, thesecond semiconductor chips 400 and the third semiconductor chips 500.The fourth semiconductor chips 600 may be mounted on the packagesubstrate 110 and may be supported by the capacitor structure 300. Inthe example of FIG. 1, the fourth semiconductor chips 600 may includefourth semiconductor chips 600 a, 600 b, 600 c and 600 d. The fourthsemiconductor chips 600 a, 600 b, 600 c and 600 d may be adhered ontothe capacitor structure 300 by adhesive members 640 a, 640 b, 640 c and640 d, respectively. For example, the adhesive members 640 a, 640 b, 640c and 640 d may include an adhesive film such as a direct adhesive film(DAF).

The fourth semiconductor chips 600 may include chip pads 602 on an uppersurface of the fourth semiconductor chips 600 (e.g., an active surface).In some embodiments, each of the fourth semiconductor chips 600 a, 600b, 600 c and 600 d may include chip pads 602 on a corresponding uppersurface of the fourth semiconductor chips 600 a, 600 b, 600 c and 600 d.The chip pads 602 may include an input/output terminal serving as apower pin or an input/output terminal serving as a ground pin. Althoughnot illustrated in the figures, the fourth semiconductor chips 600 mayfurther include chip signal pads which include input/output terminalsserving as data pins.

The fourth semiconductor chip 600 may be electrically connected to thepackage substrate 110 by fourth conductive connection members 630. Insome embodiments, the fourth conductive connection members 630 mayelectrically connect the chip pads 602 of the fourth semiconductor chips600 to the substrate pad 120 of the package substrate 110. For example,the fourth conductive connection members 630 may include a bonding wire.Accordingly, the fourth semiconductor chips 600 may be stacked on thecapacitor structure 300 by the adhesive members 640 a, 640 b, 640 c and640 d, and may be electrically connected to the package substrate 110 bya plurality of the fourth conductive connection members 630.

The fourth semiconductor chips 600 may be memory chips including amemory circuit. For example, the fourth semiconductor chips 600 mayinclude non-volatile memory devices such as NAND flash memory devices.The number, sizes, locations, etc. of the fourth semiconductor chips 600are exemplarily illustrated, and thus, it may not be limited thereto.

As illustrated in FIG. 3, the capacitor structure 300 may be connectedto at least one of the first to fourth semiconductor chips 200, 400,500, and 600 through the wirings 160, 162 to provide a decouplingfunction for a corresponding electric component. For example, thecapacitor structure 300 including the decoupling capacitors 320 may beconfigured to decouple one or more of the first to fourth semiconductorchips 200, 400, 500, and 600 from other electrical components.

The capacitor pad 302 of the capacitor structure 300 may be electricallyconnected to the substrate pad 102 by the second conductive connectionmember 330, and the substrate pad 120 may be electrically connected toat least one of the first to fourth semiconductor chips 200, 400, 500,and 600 by the wirings 160, 162.

In example embodiments, the capacitor structure 300 may include aplurality of first to fourth decoupling capacitors 320 a, 320 b, 320 cand 320 d on the semiconductor substrate 310. Each of the first tofourth decoupling capacitors 320 a, 320 b, 320 c and 320 d may include aplurality of the capacitor pads 302. For example, each of the first tofourth decoupling capacitors 320 a, 320 b, 320 c and 320 d may includethe capacitor pads 302 as the power terminal pad and the ground terminalpad. The first to fourth decoupling capacitors 320 a, 320 b, 320 c and320 d may be formed to be electrically isolated from each other.

An area of the capacitor structure 300 (e.g., the number of thecapacitor structures 300) and the number of the decoupling capacitors320 may be determined by a sawing process of the semiconductormanufacturing process. The capacitor structure 300 divided by the sawingprocess may include one or more decoupling capacitors 320. For example,in the example of FIG. 3, the capacitor structure 300 includes first tofourth decoupling capacitors 320 a, 320 b, 320 c and 320 d.

Additionally, some of the decoupling capacitors 320 may be electricallyconnected to the package substrate 110. As illustrated in FIG. 3, thefirst and second decoupling capacitors 320 a and 320 b may beelectrically connected to the substrate pads 120 of the packagesubstrate 110, whereas the third and fourth decoupling capacitor 320 cand 320 d may not be electrically connected to the package substrate110. A capacitance of the capacitor structure 300 may be determined bythe number of the decoupling capacitors 320 connected to the substratepads 120 of the package substrate 110. That is, the decouplingcapacitors 320 to be connected to the power net of the package substrate110 may be selected based on the capacitance required in thesemiconductor package 100.

In example embodiments, the decoupling capacitors 320 may include atleast one of a metal-oxide-semiconductor (MOS) type capacitor(illustrated in FIG. 4), a cell type capacitor (illustrated in FIG. 5),and a metal wiring type capacitor (illustrated in FIG. 6), each of whichmay be formed on the semiconductor substrate 310 by a semiconductormanufacturing process.

As illustrated in FIG. 4, the MOS type capacitor may include aninsulation layer and a metal layer stacked on a semiconductor substrate.The insulation layer may include silicon oxide.

For example, after a decoupling capacitor 320 having a MOS structure isformed on a silicon wafer by a front-end-of-line (FEOL) process of asemiconductor manufacturing process, a backside of the silicon wafer maybe removed by a planarization process, such that the wafer has a desiredthickness T. Then, the silicon wafer may be divided by a sawing processto form an individual capacitor structure 300. Accordingly, thecapacitor structure 300 may include a semiconductor substrate 310 and ametal-oxide-semiconductor (MOS) type capacitor 320 formed in an uppersurface of the semiconductor substrate 310. Themetal-oxide-semiconductor (MOS) type capacitor 320 may be formed to animplant depth of the upper region of the semiconductor substrate 310.

In a manufacturing method of the MOS type decoupling capacitor 320,first, an N-type semiconductor layer 322 and a P-type semiconductorlayer 326 may be sequentially formed in the upper surface of thesemiconductor substrate 310 by ion implantation processes. Then, aninsulation layer 312 may be formed to cover the N-type and P-typesemiconductor layers 322 and 326. The insulation layer 312 may includesilicon oxide. Then, capacitor pads 302 may be formed on the insulationlayer 312 to be electrically connected to the N-type and P-typesemiconductor layers 322 and 326, respectively.

Accordingly, the MOS type decoupling capacitor 320 may include theN-type semiconductor layer 322 as a lower electrode, the P-typesemiconductor layer 326 as an upper electrode, and a dielectric layer324 formed between the N-type semiconductor layer 322 and the P-typesemiconductor layer 326.

Alternatively, in the manufacturing method of the MOS type decouplingcapacitor 320, an insulation layer may be formed on the upper surface ofthe semiconductor substrate doped with the N-type semiconductor layer tocover the N-type semiconductor layer, and then, a P-type polysiliconlayer may be formed on the insulation layer. In this case, the MOS typecapacitor may include the N-type semiconductor layer as the lowerelectrode and the P-type polysilicon layer as the upper electrode.

As illustrated in FIG. 5, the cell type decoupling capacitor 320 mayinclude a structure similar to a cell capacitor of a memory cell on a ona semiconductor substrate.

For example, after a decoupling capacitor 320 having a capacitorstructure provided in a memory cell is formed on a silicon wafer by afront-end-of-line (FEOL) process of a semiconductor manufacturingprocess, a backside of the silicon wafer may be removed by aplanarization process, such that the wafer has a desired thickness T.Then, the silicon wafer may be divided by a sawing process to form anindividual capacitor structure 300. Accordingly, the capacitor structure300 may include a semiconductor substrate 310 and a cell type decouplingcapacitor 320 formed in an upper surface of the semiconductor substrate310.

In a manufacturing method of the cell type capacitor, first, a P-typesemiconductor layer 322 may be formed in the upper surface of thesemiconductor substrate 310 by an ion implantation process and aninsulation interlayer 312 may be formed to cover the P-typesemiconductor layer 322. For example, ion implantation may be used topenetrate the upper surface of the semiconductor substrate 310, therebyforming the P-type semiconductor layer 322 to an implant depth of anupper region of the semiconductor substrate 310. Then, after an openingis formed in the P-type semiconductor layer 322, a dielectric layer 324and a storage node 326 may be formed sequentially in the opening. Forexample, a dielectric layer 324 may be conformally formed on along theopening, and the storage node 326 may be formed to fill the remainder ofthe opening. Then, after an upper insulation layer (not illustrated) isformed on the insulation interlayer 312 to cover the storage node 326,capacitor pads (not illustrated) may be formed on the upper insulationlayer to be electrically connected to the P-type semiconductor layer 322and the storage node 326 respectively.

Accordingly, the cell type capacitor 320 may include the P-typesemiconductor layer 322 as a lower electrode, the storage node 326 as anupper electrode and the dielectric layer 324 formed between the P-typesemiconductor layer 322 and the storage node 326.

As illustrated in FIG. 6, the metal wiring type decoupling capacitor 320may include an upper wiring layer structure on a semiconductorsubstrate.

For example, after a metal wiring type decoupling capacitor 320 havingan upper wiring layer structure is formed on a silicon wafer by afront-end-of-line (FEOL) process of a semiconductor manufacturingprocess, a backside of the silicon wafer may be removed by aplanarization process, such that the wafer has a desired thickness T.Then, the silicon wafer may be divided by a sawing process to form anindividual capacitor structure 300. Accordingly, the capacitor structure300 may include a semiconductor substrate 310 and a metal wiring typedecoupling capacitor 320 formed in an upper surface of the semiconductorsubstrate 310.

In a manufacturing method of the metal wiring type decoupling capacitor320, first, a first wiring 322, a dielectric layer 324 and a secondwiring 326 may be formed sequentially on the upper surface of thesemiconductor substrate 310 by an upper wiring process. Then, capacitorpads (not illustrated) may be formed to be electrically connected to thefirst and second wirings 322 and 326 respectively.

Accordingly, the metal wiring type capacitor 320 may include the firstwiring 322 as a lower electrode, the second wiring 326 as an upperelectrode and the dielectric layer 324 between the first wiring 322 andthe second wiring 326.

In example embodiments, referring to FIG. 1, the molding member 700 maybe formed on the package substrate 110 to protect the firstsemiconductor chip 200, the capacitor structure 300, the secondsemiconductor chips 400, the third semiconductor chips 500 and thefourth semiconductor chips 600 from the surrounding environment. Themolding member may include epoxy molding compound (EMC).

Outer connection pads 130 for supplying an electrical signal may beformed on the lower surface 114 of the package substrate 110. The outerconnection pads 130 may be exposed from a second insulation layer 150.For example, the second insulation layer 150 may surround, but notcover, the outer connection pads 130. The second insulation layer 150may include a silicon oxide layer, a silicon nitride or a siliconoxynitride layer. An outer connection member 800 for electricalconnection with an external device (not illustrated) may be disposed onthe outer connection pad 130. For example, the outer connection member800 may include an external connection terminal such as a solder ball.The semiconductor package 100 may be mounted on a module substrate (notillustrated) via the solder balls to form a memory module. For example,outer connection member 800 may provide contact between thesemiconductor package 100 and the module substrate.

As mentioned above, the semiconductor package 100 may include thecapacitor structure 300 having the decoupling capacitor 320 and thesemiconductor chips 600 formed on and the capacitor structure 300. Sincethe capacitor structure 300 is formed by a semiconductor manufacturingprocess, the capacitor structure 300 may provide a desired area andthickness in consideration of the size and thickness of thesemiconductor chips 600 mounted in the semiconductor package 100.Additionally, the capacitor structure 300 may include a plurality of thedecoupling capacitors 320 and thus may provide a desired capacitancerequired in the semiconductor package 100 within a predetermineddimension.

Hereinafter, a method of manufacturing the semiconductor package in FIG.1 will be explained.

FIGS. 7 to 11 are views illustrating a method of manufacturing asemiconductor package in accordance with example embodiments.

Referring to FIG. 7, first, a semiconductor manufacturing process may beperformed on a semiconductor substrate to form a plurality of chipcapacitors 30, and then, the semiconductor substrate may be cut by asawing process into an individual capacitor structure.

In example embodiments, a semiconductor manufacturing process may beperformed on a silicon wafer W to form chip capacitors 30, and then, abackside of the silicon wafer W may be removed by a planarizationprocess to achieve a desired thickness. For example, the capacitorstructure may have the thickness of from about 10 μm to about 800 μm.Then, the wafer W may be cut by a sawing process into the individualcapacitor structure, each having at least one the chip capacitor 30.

For example, the chip capacitor 30 may include at least one of ametal-oxide-semiconductor (MOS) type capacitor, as discussed above inconnection with FIG. 4, a cell type capacitor, as discussed above inconnection with FIG. 5, and a metal wiring type capacitor, as discussedabove in connection with FIG. 6. The aforementioned capacitors 320 maybe formed on the semiconductor substrate 310 by a semiconductormanufacturing process.

In a manufacturing method of the MOS type capacitor, as illustrated inFIG. 4, first, an N type semiconductor layer 322 and a P typesemiconductor layer 326 may be sequentially formed in the upper surfaceof the semiconductor substrate 310 by ion implantation processes. Then,an insulation layer 312 may be formed to cover the N type and P typesemiconductor layers 322 and 326. The insulation layer 312 may includesilicon oxide. Then, capacitor pads 302 may be formed on the insulationlayer 312 to be electrically connected to the N type and P typesemiconductor layers 322 and 326 respectively.

Accordingly, the MOS type capacitor 320 may include the N typesemiconductor layer 322 as a lower electrode, the P type semiconductorlayer 326 as an upper electrode and a dielectric layer 324 therebetween.

In a manufacturing method of the cell type capacitor, as illustrated inFIG. 5, first, a P type semiconductor layer 322 may be formed in theupper surface of the semiconductor substrate 310 by an ion implantationprocess and an insulation interlayer 312 may be formed to cover the Ptype semiconductor layer 322. Then, after an opening is formed in the Ptype semiconductor layer 322, a dielectric layer 324 and a storage node326 may be formed sequentially in the opening. Then, after an upperinsulation layer is formed on the insulation interlayer 312 to cover thestorage node 326, capacitor pads (not illustrated) may be formed on theupper insulation layer to be electrically connected to the P typesemiconductor layer 322 and the storage node 326 respectively.

Accordingly, the cell type capacitor 320 may include the P typesemiconductor layer 322 as a lower electrode, the storage node 326 as anupper electrode and the dielectric layer 324 therebetween.

In a manufacturing method of the metal wiring type capacitor, asillustrated in FIG. 6, first, a first wiring 322, a dielectric layer 324and a second wiring 326 may be formed sequentially on the upper surfaceof the semiconductor substrate 310 by an upper wiring process. Then,capacitor pads (not illustrated) may be formed to be electricallyconnected to the first and second wirings 322 and 326 respectively.

Accordingly, the metal wiring type capacitor 320 may include the firstwiring 322 as a lower electrode, the second wiring 326 as an upperelectrode and the dielectric layer 324 therebetween.

In example embodiments, the chip capacitor 30 may include one or morecapacitors 320 a, 320 b, 320 c and 320 d. The capacitors 320 a, 320 b,320 c and 320 d may have same capacitances. The wafer W may be cut by asawing process such that, after being divided by the sawing process, onecapacitor structure include one or more chip capacitors 30.

For example, when the wafer W is cut such that an individually dividedfirst capacitor structure includes one chip capacitor 30, the firstcapacitor structure may include four capacitors 320 and may have a firstarea. The first area may correspond to the number of capacitors includedin the first capacitor structure (i.e., four capacitors). When the waferW is cut such that an individually divided one second capacitorstructure includes two chip capacitors 30, the one capacitor structuremay include eight capacitors and may have a second area. The second areamay correspond to the number of capacitors included in the secondcapacitor structure (i.e., eight capacitors). In this example, thesecond area may be two times greater than the first area.

Accordingly, the thickness and the area of the individually dividedcapacitor structure may be determined by the planarization and thesawing process.

Referring to FIG. 8, a first semiconductor chip 200 and the capacitorstructure 300 may be stacked on a semiconductor substrate 10.

The first semiconductor chip 200 may be adhered onto an upper surface 12of the semiconductor substrate 10 by an adhesive member 240. Thecapacitor structure 300 may be adhered onto the upper surface 12 of thesemiconductor substrate 10 by an adhesive member 340 and may be spacedapart from the first semiconductor chip 200. For example, the adhesivemembers 240 and 340 may include an adhesive film such as a directadhesive film (DAF).

Then, a wiring bonding process may be performed to connect chips pads202 of the first semiconductor chip 200 and capacitor pads 302 of thecapacitor structure 300 to substrate pads 120 on the upper surface 12 ofthe semiconductor substrate 10. The chip pads 202 of the firstsemiconductor chip 200 may be connected to the substrate pads 120 byfirst conductive connection members 230. The capacitor pads 302 of thecapacitor structure 300 may be connected to the substrate pads 120 bysecond conductive connection members 330.

Referring to FIG. 9, a plurality of second semiconductor chips 400 and aplurality of third semiconductor chips 500 may be stacked on thesemiconductor substrate 10 and may be spaced apart from the firstsemiconductor chip 200 and the capacitor structure 300.

A plurality of the second semiconductor chips 400 and a plurality of thethird semiconductor chips 500 may be adhered onto the upper surface 12of the semiconductor substrate 10 by adhesive members.

Then, a wiring bonding process may be performed to connect chips pads402 of the second semiconductor chip 400 and chip pads 502 of the fourthsemiconductor chip 500 to the substrate pads 120 on the upper surface 12of the semiconductor substrate 10. The chip pads 402 of the secondsemiconductor chips 400 may be connected to the substrate pads 120 bythird conductive connection members 430. The chip pads 502 of the thirdsemiconductor chips 500 may be connected to the substrate pads 120 byfourth conductive connection members 530.

Referring to FIG. 10, a plurality of fourth semiconductor chips 600 maybe stacked on the first semiconductor chip 200, the capacitor structure300, the second semiconductor chips 400 and the third semiconductorchips 500.

The fourth semiconductor chips 600 a, 600 b, 600 c and 600 d may beadhered onto the capacitor structure 300 by adhesive members 640 a, 640b, 640 c and 640 d. Accordingly, the fourth semiconductor chips 600 a,600 b, 600 c and 600 d may be mounted on and supported by thesemiconductor substrate 10 by the capacitor structure 300. The fourthsemiconductor chips 600 a, 600 b, 600 c and 600 d may be offsetsequentially or in a zigzag manner to each other. An area of the stackedfourth semiconductor chips 600 may be greater than an area of the firstsemiconductor chip 200 or the capacitor structure 300. For example, whenviewed from the top down, the area (e.g., length×width) of individualones of the fourth semiconductor chips 600 may be greater than thecombined area of the first semiconductor chip 200 and the capacitorstructure 300.

Then, a wiring bonding process may be performed to connect chips pads ofthe fourth semiconductor chips 600 a, 600 b, 600 c and 600 d to thesubstrate pads 120 on the upper surface 12 of the semiconductorsubstrate 10. The chip pads 602 of the fourth semiconductor chips 600 a,600 b, 600 c and 600 d may be connected to the substrate pads 120 byfifth conductive connection members 630.

Referring to FIG. 11, a molding member 700 may be formed on thesemiconductor substrate 10 to cover the first semiconductor chip 200,the capacitor structure 300, the second semiconductor chips 400, thethird semiconductor chips 500 and the fourth semiconductor chips 600.For example, the molding member 700 may be formed on the substrate 110by a molding process, to cover the first semiconductor chip 200, thecapacitor structure 300, the second semiconductor chips 400, the thirdsemiconductor chips 500 and the fourth semiconductor chips 600. Themolding member 700 may include epoxy molding compound (EMC). Then, afterouter connection members 800 are disposed on outer connection pads 130on a lower surface 14 of the semiconductor substrate 10, the substrate10 may be cut by a sawing process into individual semiconductorpackages.

FIG. 12 is a plan view illustrating a capacitor structure of asemiconductor package in accordance with example embodiments. FIG. 13 isa plan view illustrating a package substrate of the semiconductorpackage in FIG. 12. The semiconductor package may be substantially thesame as or similar to the semiconductor package described with referenceto FIGS. 1 to 6 except for a connection relation between decouplingcapacitors of the capacitor structure. Thus, same reference numeralswill be used to refer to the same or like elements and any furtherrepetitive explanation concerning the above elements will be omitted.

Referring to FIGS. 12 and 13, a capacitor structure 300 may includefirst to fourth decoupling capacitors 320 a, 320 b, 320 c and 320 d.Capacitor pads 302 of the first to fourth decoupling capacitors 320 a,320 b, 320 c and 320 d may be electrically connected to substrate pads120 of a package substrate 110 by bonding wires.

In some embodiments, the capacitor pads 302 of the first decouplingcapacitor 320 a may be electrically connected to a fourth semiconductorchip 600 through the substrate pads 120 of the package substrate 110 andwirings 160, 162. Accordingly, the first decoupling capacitor 320 a mayprovide a decoupling function for the fourth semiconductor chip 600.

The capacitor pads 302 of the second decoupling capacitor 320 b may beelectrically connected to a first semiconductor chip 200 through thesubstrate pads 120 of the package substrate 110 and the wirings 160,162. Accordingly, the second decoupling capacitor 320 b may provide adecoupling function for the first semiconductor chip 200.

The capacitor pads 302 of the third decoupling capacitor 320 c may beelectrically connected to a third semiconductor chip 400 through thesubstrate pads 120 of the package substrate 110 and the wirings 160,162. Accordingly, the third decoupling capacitor 320 c may provide adecoupling function for the third semiconductor chip 400.

The capacitor structure 300 may include a plurality of the decouplingcapacitors 320 and thus may provide a desired capacitance required foreach of the semiconductor chips within a predetermined dimension. Forexample, the capacitor structure 300, which includes the plurality ofthe decoupling capacitors 320 each having a predetermined dimension(e.g., length and width), may provide a desired capacitance for each ofthe semiconductor chips 200, 400, 500, and 600.

FIG. 14 is a plan view illustrating a capacitor structure of asemiconductor package in accordance with example embodiments. FIG. 15 isa plan view illustrating a package substrate of the semiconductorpackage in FIG. 14. The semiconductor package may be substantially thesame as or similar to the semiconductor package described with referenceto FIGS. 1 to 6 except for a connection relation between decouplingcapacitors of the capacitor structure. Thus, same reference numeralswill be used to refer to the same or like elements and any furtherrepetitive explanation concerning the above elements will be omitted.

Referring to FIGS. 14 and 15, a capacitor structure 300 may includefirst to fourth decoupling capacitors 320 a, 320 b, 320 c and 320 d.Capacitor pads 302 of the first decoupling capacitor of the first tofourth decoupling capacitors 320 a, 320 b, 320 c and 320 d may beelectrically connected to substrate pads 120 of a package substrate 110by bonding wires.

In some embodiments, the capacitor pads 302 of the first decouplingcapacitor 320 a may be electrically connected to a fourth semiconductorchip 600 through the substrate pads 120 of the package substrate 110 andwirings 160, 162. Accordingly, the first decoupling capacitor 320 a mayprovide a decoupling function for the fourth semiconductor chip 600.

Capacitor pads 302 of the remaining second to fourth decouplingcapacitor 320 b, 320 c and 320 d may not be electrically connected tothe substrate pads 120 of the package substrate.

Accordingly, the capacitor structure 300 may provide a relatively widesupporting area for semiconductor chips thereon and may provide adecoupling function for only a selected semiconductor chip of thesemiconductor chips. For example, although only one of the decouplingcapacitors (e.g., the first decoupling capacitor 320 a) may provide thedecoupling function, the first to fourth decoupling capacitor 320 a, 320b, 320 c and 320 d may provide structure that physically supports one ormore semiconductor chips formed thereon.

FIG. 16 is a plan view illustrating a semiconductor package inaccordance with example embodiments. The semiconductor package may besubstantially the same as or similar to the semiconductor packagedescribed with reference to FIGS. 1 to 6 except for a capacitorstructure. Thus, same reference numerals will be used to refer to thesame or like elements and any further repetitive explanation concerningthe above elements will be omitted.

Referring to FIG. 16, a capacitor structure 300 may have an area abouttwo times greater than an area of the capacitor structure in FIG. 1. Thecapacitor structure 300 may include eight decoupling capacitors. In someembodiments, the capacitor structure 300 may be formed by a wafer sawingprocess to include two chip capacitors. For example, in an embodimentwhere the capacitor structure 300 includes two chip capacitors, thefirst chip capacitor may include first to fourth decoupling capacitors,and the second chip capacitor may include fifth to eight decouplingcapacitors. The area of the capacitor structure 300 may be determined bythe sawing process. The capacitor structure 300 having twice the areamay be used to support a relatively wider semiconductor chip.

Accordingly, the area of the capacitor structure may be adjusted tosupport a greater supporting area.

FIG. 17 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments. FIG. 18 is a cross-sectionalview illustrating a capacitor structure and a first semiconductor chipon a package substrate of the semiconductor package in FIG. 17. FIG. 19is a plan view illustrating the capacitor structure in FIG. 18. Thesemiconductor package may be substantially the same as or similar to thesemiconductor package as described with reference to FIGS. 1 to 6,except for a plurality of capacitor structures. Thus, same referencenumerals will be used to refer to the same or like elements and anyfurther repetitive explanation concerning the above elements will beomitted.

Referring to FIGS. 17 to 19, a semiconductor package 101 may include apackage substrate 110, a first semiconductor chip 200, first and secondcapacitor structures 300 a and 300 b, a plurality of secondsemiconductor chips 400, and a molding member 500.

In example embodiments, the first semiconductor chip 200 may be mountedon the package substrate 110. The first semiconductor chip 200 may beadhered onto an upper surface 112 of the package substrate 110 by anadhesive member 240. The first semiconductor chip 200 may beelectrically connected to the package substrate 110 by first conductiveconnection members 230. The first conductive connection member 230 mayelectrically connect a chip pad of the first semiconductor chip 200 tothe substrate pad 120 of the package substrate 110.

The first and second capacitor structures 300 a and 300 b may be stackedsequentially on the upper surface of the package substrate 110. Thefirst capacitor structure 300 a may be adhered onto the upper surface112 of the package substrate 110 by an adhesive member 340 a, and thesecond capacitor structure 300 b may be adhered on the first capacitorstructure 300 a by an adhesive member 340 b. Adhesive members 340 a and340 b may be a same material.

The first capacitor structure 300 a may include a first semiconductorsubstrate 310 a and a first capacitor 320 a formed in an upper surfaceof the first semiconductor substrate 310 a. The second capacitorstructure 300 b may include a second semiconductor substrate 310 b and asecond capacitor 320 b formed in an upper surface of the secondsemiconductor substrate 310 b. For example, the first and secondcapacitor structures 300 a and 300 b may be individual same structurescut by a wafer sawing process.

A thickness T1 of the first capacitor structure 300 a may be the same asor different from a thickness T2 of the second capacitor structure 300b. For example, a height of the first capacitor structure 300 a in thethird direction D3 may be the same or different from the height of thesecond capacitor structure 300 b in the third direction D3. Accordingly,a plurality of capacitor structures 300 a and 300 b may be stacked oneach other to be used as a support member having a desired height (e.g.,including a combined height of the first and second capacitor structures300 a and 300 b and adhesive members 340 a and 340 b).

The first capacitor structure 300 a may be electrically connected to thepackage substrate 110 by second conductive connection members 330.Capacitor pads 302 of the first capacitor 320 a of the first capacitorstructure 300 a may be electrically connected to the substrate pads ofthe package substrate 110 by the second conductive connection members330. The second capacitor structure 300 b may be electrically connectedto the package substrate 110 by the second conductive connection members330. Capacitor pads 302 of the second capacitor 320 b of the secondcapacitor structure 300 b may be electrically connected to the substratepads of the package substrate 110 by the second conductive connectionmembers 330.

A plurality of the second semiconductor chips 400 (e.g., semiconductorchips 400 a, 400 b, 400 c and 400 d) may be stacked on the firstsemiconductor chip 200 and the first and second capacitor structures 300a and 300 b. The second semiconductor chips 400 may be mounted on andsupported by the package substrate 110 by the first and second capacitorstructures 300 a and 300 b. The second semiconductor chips 400 a, 400 b,400 c and 400 d may be adhered on the capacitor structure 300 byadhesive members 440 a, 440 b, 440 c and 440 d, respectively.

The second semiconductor chips 400 may be electrically connected to thepackage substrate 110 by third conductive connection members 430. Thethird conductive connection member 430 may electrically connect a chippad of the second semiconductor chip 400 to the substrate pad 120 of thepackage substrate 110. The molding member 500 may be formed on thepackage substrate 110 to protect the first semiconductor chip 200, thefirst and second capacitor structures 300 a and 300 b and the secondsemiconductor chips 400 from the surrounding environment.

FIG. 20 is a cross-sectional view illustrating a semiconductor packagein accordance with example embodiments. The semiconductor package may besubstantially the same as or similar to the semiconductor package asdescribed with reference to FIGS. 1 to 6, except for an arrangement of acapacitor structure. Thus, same reference numerals will be used to referto the same or like elements and any further repetitive explanationconcerning the above elements will be omitted.

Referring to FIG. 20, a semiconductor package 102 may include a packagesubstrate 110, a plurality of first semiconductor chips 200, a capacitorstructure 300, a second semiconductor chip 400, a plurality of thirdsemiconductor chips 500 and a molding member 900.

In example embodiments, a plurality of the first semiconductor chips 200may be stacked on the package substrate 110. The first semiconductorchips 200 a, 200 b and 200 c may be adhered on the package substrate 110by adhesive members 240 a, 240 b, and 240 c, respectively. For example,adhesive member 240 a may adhere the first semiconductor chip 200 a tothe package substrate 110, adhesive member 240 b may adhere the firstsemiconductor chip 200 b to the first semiconductor chip 200 a, andadhesive member 240 c may adhere the first semiconductor chip 200 c tothe first semiconductor chip 200 b. The first semiconductor chip 200 maybe electrically connected to the package substrate 110 by firstconductive connection members 230. In some embodiments, the firstconductive connection members 230 may electrically connect a chip pad ofthe first semiconductor chip 200 to the substrate pad 120 of the packagesubstrate 110.

The capacitor structure 300 may be stacked on the uppermost firstsemiconductor chip 200 c of the plurality of the first semiconductorchips 200. The capacitor structure 300 may be adhered on the uppermostsemiconductor chip 200 c by an adhesive member 340. The capacitorstructure 300 may include a semiconductor substrate 310 and at least onedecoupling capacitor 320 formed in an upper surface of the semiconductorsubstrate 310.

The capacitor structure 300 may be electrically connected to the packagesubstrate 110 by second conductive connection members 330. Capacitorpads of the capacitor structure 300 may be electrically connected to thesubstrate pads 120 of the package substrate 110 by the second conductiveconnection members 330.

The second semiconductor chip 400 may be stacked on the uppermost firstsemiconductor chip 200 c of the plurality of the first semiconductorchips 200 and may be spaced apart from the capacitor structure 300. Forexample, the second semiconductor chip 400 may be spaced apart from thecapacitor structure 300 in a first direction D1. The secondsemiconductor chip 400 may be adhered on the uppermost semiconductorchip 200 c by an adhesive member 440. The adhesive member 440 may havesubstantially the same thickness as that of the adhesive member 340, andmay be formed of the same material as adhesive member 340.

The second semiconductor chips 400 may be electrically connected to thepackage substrate 110 by third conductive connection members 430. Thethird conductive connection members 430 may electrically connect a chippad of the second semiconductor chip 400 to the substrate pad 120 of thepackage substrate 110.

A thickness of the capacitor structure 300 may be determined to besubstantially the same as a thickness of the second semiconductorsubstrate 400. For example, a height of the capacitor structure 300 inthe third direction D3 may be substantially the same as the height ofthe second semiconductor substrate 400 in the third direction D3.Accordingly, the upper surface of the second semiconductor chip 400 maybe coplanar with the upper surface of the capacitor structure 300.

A plurality of the third semiconductor chips 500 may be stacked on thecapacitor structure 300 and the second semiconductor chip 400. The thirdsemiconductor chips 500 may be mounted on and supported by the uppermostsemiconductor chip 200 c by the capacitor structure 300. The thirdsemiconductor chips 500 a, 500 b and 500 c may be adhered on thecapacitor structure 300 by adhesive members 540 a, 540 b, and 540 c,respectively. For example, adhesive member 240 a may be disposed on thecapacitor structure 300 and the second semiconductor chip 400, the thirdsemiconductor chip 500 a may be disposed on the adhesive member 240 a,the adhesive member 240 b may be disposed on the third semiconductorchip 500 a, the third semiconductor chip 500 b may be disposed on theadhesive member 240 b, the adhesive member 240 c may be disposed on thethird semiconductor chip 500 b, and the third semiconductor chip 500 cmay be disposed on the adhesive member 240 c.

The molding member 900 may be formed on the package substrate 110 toprotect the first semiconductor chips 200, the capacitor structure 300,the second semiconductor chip 400 and the third semiconductor chips 500from the surrounding environment.

The method of manufacturing the semiconductor package may be iterated tomanufacture semiconductor packages including logic devices and memorydevices. For example, the semiconductor package may include logicdevices such as central processing units (CPUs), main processing units(MPUs), or application processors (APs), or the like, and volatilememory devices such as DRAM devices, SRAM devices, or non-volatilememory devices such as flash memory devices, PRAM devices, MRAM devices,ReRAM devices, or the like.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent invention. Accordingly, all such modifications are intended tobe included within the scope of example embodiments as defined in theclaims.

1.-20. (canceled)
 21. A semiconductor package, comprising: a packagesubstrate having an upper surface and a lower surface and including aplurality of substrate pads formed on the upper surface; at least onecapacitor structure arranged on the upper surface of the packagesubstrate and including a semiconductor substrate and a plurality ofdecoupling capacitors formed in an upper region of the semiconductorsubstrate to be separated from each other, each other decouplingcapacitors including respective capacitor pads; a first semiconductorchip arranged on the upper surface of the package substrate, the firstsemiconductor chip being spaced apart from the capacitor structure; aplurality of second semiconductor chips mounted on the capacitorstructure and the first semiconductor chip using an adhesive film thatis in contact with the capacitor structure and the first semiconductorchip; and conductive connection members electrically connecting at leastone of the capacitor pads of the decoupling capacitor to a correspondingsubstrate pad of the package substrate.
 22. The semiconductor package ofclaim 21, wherein the decoupling capacitor comprises at least one of ametal-oxide-semiconductor type capacitor, a cell type capacitor and ametal wiring type capacitor formed on the semiconductor substrate. 23.The semiconductor package of claim 21, wherein a subset of the pluralityof decoupling capacitors are electrically connected to the packagesubstrate.
 24. The semiconductor package of claim 21, wherein theplurality of decoupling capacitors are electrically isolated from eachother.
 25. The semiconductor package of claim 21, wherein a thickness ofthe first semiconductor chip is the same as a thickness of the capacitorstructure.
 26. The semiconductor package of claim 21, wherein thecapacitor structure has a height of from about 10 μm to about 800 μm.27. The semiconductor package of claim 21, wherein the capacitor padsare provided on an upper surface of the capacitor structure.
 28. Thesemiconductor package of claim 21, further comprising: second conductiveconnection members electrically connecting chip pads of the secondsemiconductor chips to the substrate pads.
 29. The semiconductor packageof claim 21, wherein a plurality of the capacitor structures are stackedon the upper surface of the package substrate.
 30. The semiconductorpackage of claim 29, wherein a thickness of the first semiconductor chipis the same as a sum of thicknesses of the stacked capacitor structures.31. A semiconductor package, comprising: a package substrate having anupper surface and a lower surface and including a plurality of substratepads formed on the upper surface; at least one capacitor structurearranged on the upper surface of the package substrate and including asemiconductor substrate and a plurality of decoupling capacitors formedin an upper region of the semiconductor substrate to be separated fromeach other, each other decoupling capacitors including respectivecapacitor pads; a first semiconductor chip arranged on the upper surfaceof the package substrate, the first semiconductor chip being spacedapart from the capacitor structure; a plurality of second semiconductorchips mounted on the capacitor structure and the first semiconductorchip and supported by the capacitor structure and the firstsemiconductor chip; first conductive connection members electricallyconnecting first chip pads of the first semiconductor chip tocorresponding substrate pads; second conductive connection memberselectrically connecting second chip pads of the plurality of secondsemiconductor chips to corresponding substrate pads; and thirdconductive connection members electrically connecting at least one ofthe capacitor pads of the decoupling capacitor to a correspondingsubstrate pad.
 32. The semiconductor package of claim 31, wherein thedecoupling capacitor comprises at least one of ametal-oxide-semiconductor type capacitor, a cell type capacitor and ametal wiring type capacitor formed on the semiconductor substrate. 33.The semiconductor package of claim 31, wherein a subset of the pluralityof decoupling capacitors are electrically connected to the packagesubstrate.
 34. The semiconductor package of claim 31, wherein theplurality of decoupling capacitors are electrically isolated from eachother.
 35. The semiconductor package of claim 31, wherein the thirdconductive connection members include bonding wires that electricallyconnect the respective capacitor pads to the respective substrate pads.36. The semiconductor package of claim 31, wherein a thickness of thefirst semiconductor chip is the same as a thickness of the capacitorstructure.
 37. The semiconductor package of claim 31, wherein thecapacitor pads are provided on an upper surface of the capacitorstructure.
 38. The semiconductor package of claim 31, wherein an uppersurface of the capacitor structure is at the same vertical level as anupper surface of the first semiconductor chip.
 39. The semiconductorpackage of claim 31, wherein the at least one capacitor structureincludes a first capacitor structure and a second capacitor structuresequentially stacked the upper surface of the package substrate, each ofthe first and second capacitor structures including the plurality ofdecoupling capacitors.
 40. The semiconductor package of claim 39,wherein a thickness of the first semiconductor chip is the same as a sumof thicknesses of the first and second capacitor structures.